Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. Photon Emission from Avalanche Breakdown in Silicon
2. Visible Light from a Siliconp−nJunction
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4. Polarization analysis of hot-carrier light emission in silicon
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