Light-emitting devices in industrial CMOS technology-Reference-Cited by-同舟云学术

Light-emitting devices in industrial CMOS technology

Published:1993-06 Issue: Volume:37-38 Page:527-533
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Kramer J.,Seitz P.,Steigmeier E.F.,Auderset H.,Delley B.,Baltes H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Industrial CMOS technology for the integration of optical metrology systems photo-ASICS;Kramer;Sensors and Actuators A,1992

2. Radiation resulting from recombination of holes and electrons in silicon;Haynes;Phys. Rev.,1956

3. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers;Canham;Appl. Phys. Lett.,1990

4. Porous silicon formation: a quantum wire effect;Lehmann;Appl. Phys. Lett.,1991

5. Current-induced light emission from a porous silicon device;Richter;IEEE Electron Device Lett.,1991

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