Use of carrier injection engineering to increase the light intensity of a polycrystalline silicon avalanche mode light-emitting device-Reference-Cited by-同舟云学术

Use of carrier injection engineering to increase the light intensity of a polycrystalline silicon avalanche mode light-emitting device

Published:2020-11-07 Issue:17 Volume:128 Page:173104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu Kejun¹^ORCID,Chen Yanxu¹^ORCID,Cheng Junji¹^ORCID,Xu Kaikai¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Funder

National Key Research and Development Program of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0020113

Reference27 articles.

1. CMOS monolithic optoelectronic integrated circuit for on-chip optical interconnection

2. GaN-based optoelectronics on silicon substrates

3. Erbium point defects in silicon

4. The excitation mechanism of rare-earth ions in silicon nanocrystals

5. Photonic Transitions (1.4 eV–2.8 eV) in Silicon p$^{+}$np$^{+}$ Injection-Avalanche CMOS LEDs as Function of Depletion Layer Profiling and Defect Engineering

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