Development of Hard Mask Process on Magnetic Tunnel Junction for a 4-Mbit Magnetic Random Access Memory-Reference-Cited by-同舟云学术

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Development of Hard Mask Process on Magnetic Tunnel Junction for a 4-Mbit Magnetic Random Access Memory

Published:2007-07-04 Issue:7A Volume:46 Page:4121-4124
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nagahara Kiyokazu,Mukai Tomonori,Hada Hiromitsu,Ishiwata Nobuyuki,Kasai Naoki,Asao Yoshiaki,Yoda Hiroaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference5 articles.

1. 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

2. Ion-Beam-Etched Profile Control of MTJ Cells for Improving the Switching Characteristics of High-Density MRAM

3. Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer

4. Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers

5. Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. STT MRAM patterning challenges;SPIE Proceedings;2013-03-29

2. Etching Magnetic Tunnel Junction with Metal Etchers;Japanese Journal of Applied Physics;2010-08-20

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