Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor-Reference-Cited by-同舟云学术

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Highly Stable Thermal Characteristics of a Novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs High-Electron-Mobility Transistor

Published:2007-04-24 Issue:4B Volume:46 Page:2344-2347
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Su Ke-Hua,Hsu Wei-Chou,Lee Ching-Sung,Hu Po-Jung,Hsiao Ru-Shang,Chen Jenn-Fang,Chi Tung-Wei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. Band Anticrossing in GaInNAs Alloys

2. Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization

3. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m

4. Single Mode 1.3 µm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy

5. Low threshold, high reliability 1.3 [micro sign]m PACIS (p-substrate Al-oxide confined inner stripe) lasers and application to laser arrays

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures;Journal of The Electrochemical Society;2011

2. Comparative Studies on Temperature-Dependent Characteristics of Passivated In[sub 0.2]Ga[sub 0.8]AsSb∕GaAs High-Electron-Mobility Transistors;Journal of The Electrochemical Society;2009

3. Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor;Semiconductor Science and Technology;2008-03-12

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