Single Mode 1.3 µm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Single Mode 1.3 µm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy

Published:2004-11-12 Issue:No. 12A Volume:43 Page:L1555-L1557
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hsiao Ru-Shang,Wang Jyh-Shyang,Lin Kun-Feng,Wei Li,Liu Hui-Yu,Liang Chiu-Yueh,Lai Chih-Ming,Kovsh Alexey R.,Maleev Nikolay A.,Chi Jim-Y,Chen Jenn-Fang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/43/i=12A/a=L1555/pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures;Journal of The Electrochemical Society;2011

2. Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer;Nanotechnology;2010-06-02

3. Investigations on the Highly-Stable Thermal Characteristics of a Dilute Al0.3Ga0.7As/In0.3Ga0.7As0.99N0.01/GaAs HFET;Journal of the Korean Physical Society;2008-12-15

4. Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor;Semiconductor Science and Technology;2008-03-12

5. Recent advances in surface-emitting lasers;Optical Fiber Telecommunications V A;2008

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