Ion-Implanted B Concentration Profiles in Ge
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
2. Electrical characterization of germanium p-channel MOSFETs
3. Ion implantation of boron in germanium
4. Diffusion of ion-implanted boron in germanium
5. Activation and diffusion studies of ion-implanted p and n dopants in germanium
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Waveguide-integrated vertical pin photodiodes of Ge fabricated on p+ and n+ Si-on-insulator layers;Japanese Journal of Applied Physics;2017-02-24
2. Quasi Crystal Lindhard–Scharff–Schiott Theory and Database for Ion Implantation Profiles in Si1-xGexSubstrate Based on the Theory;Japanese Journal of Applied Physics;2009-07-21
3. Simplified Analytical Model of Extended Second-Order Lindhard–Scharff–Schiott Theory;Japanese Journal of Applied Physics;2009-04-20
4. Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation;IEEE Transactions on Electron Devices;2009-04
5. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance;Journal of The Electrochemical Society;2008
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