Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors-Reference-Cited by-同舟云学术

Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors

Published:2007-04-24 Issue:4B Volume:46 Page:1859-1864
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakashita Shinsuke,Kawahara Takaaki,Mizutani Masaharu,Inoue Masao,Mori Kenichi,Yamanari Shinichi,Higashi Masahiko,Nishida Yukio,Honda Kazuhito,Murata Naofumi,Tsuchimoto Junichi,Yugami Jiro,Yoshimura Hidefumi,Yoneda Masahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference3 articles.

1. Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications

2. Analytical quantum mechanical model for accumulation capacitance of MOS structures

3. Electronegativities of the Elements

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors;Japanese Journal of Applied Physics;2012-07-01

2. Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors;Japanese Journal of Applied Physics;2012-06-28

3. Comprehensive study and control of oxygen vacancy induced effective work function modulation in gate-first high-k/metal inserted poly-Si stacks;2010 Symposium on VLSI Technology;2010-06

4. Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition BasedIn situMethod;Japanese Journal of Applied Physics;2007-11-22

5. Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks;IEEE Electron Device Letters;2007-10