Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary on InP Substrates and Fabrication of Light Emitting Diodes-Reference-Cited by-同舟云学术

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Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary on InP Substrates and Fabrication of Light Emitting Diodes

Published:1999-04-30 Issue:Part 1, No. 4B Volume:38 Page:2598-2602
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shinozaki Wataru,Nomura Ichirou,Shimbo Hiroyuki,Hattori Hiroshi,Sano Takashi,Che Song-Bek,Kikuchi Akihiko,Shimomura Kazuhiko,Kishino Katsumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures;Molecular Beam Epitaxy;2018

2. Preparation and Characterization of Electrosynthesized ZnSeTe Thin Films;ECS Transactions;2013-03-15

3. Molecular beam epitaxy of wide-gap II–VI laser heterostructures;Molecular Beam Epitaxy;2013

4. Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates;Japanese Journal of Applied Physics;2011-03-22

5. Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates;Japanese Journal of Applied Physics;2011-03-01

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