Preparation and Characterization of Electrosynthesized ZnSeTe Thin Films

Abstract

The zinc seleno telluride (ZnSeTe) thin films were deposited on conducting glass substrates by electroplating. Cyclic voltammetry curves were recorded to analyze the electrochemical kinetics for the grown of ZnSeTe alloys. X-ray diffraction patterns were revealed that the polycrystalline wurtzite structure of ZnSeTe thin films. The morphological studies depicted that the ellipsoidal shaped grains were distributed evenly over the entire surface of the film. The average grain size is estimated about 150 nm. The optical transmission and reflection spectrum of the deposited films were recorded in the wave length range 200 to 1200 nm. The band gap value estimated using conventional method and found to be 1.98 eV at optimized deposition parameter.