A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi2Ta2O9Ferroelectric Films Prepared by Pulsed Laser Deposition-Reference-Cited by-同舟云学术

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A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi2Ta2O9Ferroelectric Films Prepared by Pulsed Laser Deposition

Published:1999-09-30 Issue:Part 1, No. 9B Volume:38 Page:5432-5436
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Noda Minoru,Sugiyama Hideki,Okuyama Masanori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characterization of metal-ferroelectric-semiconductor non-volatile memory using BaTiO3 film prepared through sol–gel process;Applied Physics A;2019-12-14

2. Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition;Thin Solid Films;2008-11

3. Structure of non-stoichiometric Sr–Bi–Nb–O thin films grown by PLD;Journal of Crystal Growth;2005-02

4. Electrical properties of (Bi,La)4Ti3O12-based ferroelectric-gated field effect transistors employed with a thermally oxidized SiO2 layer;Journal of the European Ceramic Society;2005-01

5. Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.8 O 9 thin films;Journal of the European Ceramic Society;2004-07

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