Electrical properties of (Bi,La)4Ti3O12-based ferroelectric-gated field effect transistors employed with a thermally oxidized SiO2 layer-Reference-Cited by-同舟云学术

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Electrical properties of (Bi,La)4Ti3O12-based ferroelectric-gated field effect transistors employed with a thermally oxidized SiO2 layer

Published:2005-01 Issue:12 Volume:25 Page:2309-2312
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Pak Jaemoon,Ko Eunjung,Nam Kuangwoo,Park Gwangseo

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference19 articles.

1. Ferroelectric memories;Scott;Science,1989

2. Ferroelectric Memories;Scott,2000

3. Fatigue-free ferroelectric capacitors with platinum electrodes;Paz de Araujo;Nature,1995

4. Future DRAM development and prospects for ferroelectric memory (FRAM) applications;Tarui,1994

5. Preparation of Bi4Ti3O12 thin films by MOCVD method and electrical properties of metal/ferroelectric/insulator/semiconductor structure;Kijima;Jpn. J. Appl. Phys.,1999

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1. Conductance-capacitance and voltage behavior of 1% Os-doped YMnO3/p-Si contacts under varying frequencies;Journal of Materials Science: Materials in Electronics;2022-08

2. Magnetic properties of La 0.7 Sr 0.3 MnO 3 under the pressure and the transport property under the magnetic field;Journal of the American Ceramic Society;2020-10-06

3. Electrical properties of metal–ferroelectric–insulator–semiconductor structure using BaxSr1−xTiO3 for ferroelectric–gate field effect transistor;Solid-State Electronics;2011-08

4. BLT/STA/Si Structure for MFIS in an NDRO-Type Ferroelectric Random Access Memory;Ferroelectrics;2007-05-18

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