Electrical properties of metal–ferroelectric–insulator–semiconductor structure using BaxSr1−xTiO3 for ferroelectric–gate field effect transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. A model for the C–V characteristics of the metal–ferroelectric–insulator–semiconductor structure
2. Thermal-stress stability of yttrium oxide as a buffer layer of metal-ferroelectric-insulator-semiconductor field effect transistor
3. Structural and electrical properties of metal-ferroelectric-insulator–semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure
4. Electrical properties of (Bi,La)4Ti3O12-based ferroelectric-gated field effect transistors employed with a thermally oxidized SiO2 layer
5. Electrical properties of metal–ferroelectric–insulator–semiconductor using sol–gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
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