Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine-Reference-Cited by-同舟云学术

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Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine

Published:1999-02-28 Issue:Part 1, No. 2B Volume:38 Page:1012-1014
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Pan Zhong,Miyamoto Tomoyuki,Schlenker Dietmar,Koyama Fumio,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence microscopy investigation of lattice relaxation and defect formation processes in pseudomorphically strained InGaAsN multiple quantum wells;physica status solidi (c);2008-02

2. Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms;Applied Surface Science;2006-10

3. Comparison of Ge and GaAs Substrates for Metalorganic Vapor Phase Epitaxy of GaIn(N)As Quantum Wells;Japanese Journal of Applied Physics;2005-11-25

4. The influence of interdiffusion on the binding energy of excitons in InxGa1−xNyAs1−y /GaAs quantum wells;Superlattices and Microstructures;2005-04

5. Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift;Journal of Applied Physics;2005-03

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