Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO2after Gate Etching

Author:

Matsui Miyako,Uchida Fumihiko,Tokunaga Takafumi,Enomoto Hiroyuki,Umezawa Tadashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

2. Analysis of surface-reaction layers formed by etching Si3N4with pulsed-microwave plasma;Japanese Journal of Applied Physics;2015-05-12

3. Ion beam experiments for the study of plasma–surface interactions;Journal of Physics D: Applied Physics;2014-05-14

4. Surface analysis of polysilicon gate etching by pulsed-microwave plasma;Japanese Journal of Applied Physics;2014-01-01

5. Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-09

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