Author:
Matsui Miyako,Uchida Fumihiko,Tokunaga Takafumi,Enomoto Hiroyuki,Umezawa Tadashi
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
15 articles.
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1. Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
2. Analysis of surface-reaction layers formed by etching Si3N4with pulsed-microwave plasma;Japanese Journal of Applied Physics;2015-05-12
3. Ion beam experiments for the study of plasma–surface interactions;Journal of Physics D: Applied Physics;2014-05-14
4. Surface analysis of polysilicon gate etching by pulsed-microwave plasma;Japanese Journal of Applied Physics;2014-01-01
5. Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-09