Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO2after Gate Etching-Reference-Cited by-同舟云学术

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Low-energy Ion-scattering Spectroscopic Analysis of Structural Damage in Si Substrate under Ultrathin SiO2after Gate Etching

Published:1999-04-15 Issue:Part 1, No. 4A Volume:38 Page:2124-2130
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsui Miyako,Uchida Fumihiko,Tokunaga Takafumi,Enomoto Hiroyuki,Umezawa Tadashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Roughness-generation mechanism of Ru etching using Cl2/O2-based plasma for advanced interconnect;Journal of Vacuum Science & Technology B;2024-07-01

2. Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

3. Analysis of surface-reaction layers formed by etching Si3N4with pulsed-microwave plasma;Japanese Journal of Applied Physics;2015-05-12

4. Ion beam experiments for the study of plasma–surface interactions;Journal of Physics D: Applied Physics;2014-05-14

5. Surface analysis of polysilicon gate etching by pulsed-microwave plasma;Japanese Journal of Applied Physics;2014-01-01

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