Low Energy Electron Stimulated Etching of Thin Si-Oxide Layer in Nanometer Scale Using Scanning Tunneling Microscope-Reference-Cited by-同舟云学术

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Low Energy Electron Stimulated Etching of Thin Si-Oxide Layer in Nanometer Scale Using Scanning Tunneling Microscope

Published:1999-03-01 Issue:Part 2, No. 3A Volume:38 Page:L252-L254
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Li Nan,Yoshinobu Tatsuo,Iwasaki Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Activation energy of thermal desorption of silicon oxide layers on silicon substrates;Surface Science;2017-02

2. Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy;Japanese Journal of Applied Physics;2006-09-07

3. Consumption kinetics of Si atoms during growth and decomposition of very thin oxide on Si(001) surfaces;Thin Solid Films;2006-06

4. Nanolithography on SiO2/Si with a scanning tunnelling microscope;Nanotechnology;2003-09-24

5. Electron-Beam-Induced Decomposition of SiO2 Overlay on Si in STM Nanolithography;Nanoscale Spectroscopy and Its Applications to Semiconductor Research;2002

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