Electrical and Optical Characteristic of Liquid Phase Epitaxial InxGa1-xAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/15/i=6/a=991/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Infrared Reflectivity Determination of Alloy Composition in AlxGa1–xAs and InxGa1–xAs Structures;Applied Spectroscopy;1997-03
2. The growth of graded heterojunctions during heat treatment of indium films on GaAs;Materials Letters;1984-09
3. LPE Growth of GaInAlAs on GaAs;physica status solidi (a);1982-08-16
4. Influence of lattice mismatch on properties of InxGa1−xAs1−yPylayers epitaxially grown on InP substrates;Journal of Applied Physics;1981-07
5. Dependence of the electron drift velocity on the electrical field magnitude in GaxIn1?xAs, computed by the Monte Carlo method;Soviet Physics Journal;1981-04
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