Experimental Determination of Current Paths of Ions Implanted into Insulators
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/15/i=11/a=2289/pdf
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluation of Thin Silicon Dioxide Layers by Beam Assisted Scanning Tunneling Microscope;Japanese Journal of Applied Physics;1995-02-28
2. Scanning tunneling microscope measurement of insulator surfaces;Applied Physics Letters;1994-02-28
3. A knock‐on model to explain enhanced perimeter leakage in ion‐implanted metal‐oxide‐semiconductor structures;Journal of Applied Physics;1990-05
4. Characterization of Enhanced Perimeter Leakage in MOS Structures Following Ion Implantation;Journal of The Electrochemical Society;1990-05-01
5. Control of surface charging during high current ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02
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