A knock‐on model to explain enhanced perimeter leakage in ion‐implanted metal‐oxide‐semiconductor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344956
Reference34 articles.
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Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Edge Effects in Self-Heating-Related Instabilities in p-Channel Polycrystalline-Silicon Thin-Film Transistors;IEEE Electron Device Letters;2011-12
2. Characterisation of ultrathin dielectric films with ion beams;Zeitschrift f�r Physik A Hadrons and Nuclei;1995-06
3. Degradation of very thin gate dielectrics for MOS structures due to through-oxide ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
4. Thin‐oxide degradation along feature edges during reactive ion etching of polysilicon gates;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
5. Ion beam mixing for enhanced electron tunneling in metal‐oxide‐silicon structures;Applied Physics Letters;1993-08-09
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