Carrier Compensation ofn-GaAs by Oxygen Ion Implantation-Reference-Cited by-同舟云学术

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Carrier Compensation ofn-GaAs by Oxygen Ion Implantation

Published:1976-11 Issue:11 Volume:15 Page:2277-2278
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Itoh Tadatsugu,Tsuchiya Toshiaki,Takeuchi Masami

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/15/i=11/a=2277/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Isolation Implant Studies in GaAs;Journal of The Electrochemical Society;1990-07-01

2. Ion implantation for isolation of III-V semiconductors;Materials Science Reports;1990-01

3. Compositional disordering and the formation of semi-insulating layers in AlAs-GaAs superlattices by MeV oxygen implantation;Journal of Electronic Materials;1989-01

4. Implantation d'oxygène et co-implantation d'oxygène et de silicium, à faible dose, dans GaAs. I. Etude du phénomène de compensation;Revue de Physique Appliquée;1989

5. Defect Levels in the Near-Surface Region of 2.0 MeV 16O+ Ion Implanted n-GaAs.;MRS Proceedings;1989

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