LPE Growth of In1-xGaxAs1-yPywith Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structural and optical properties of InP1-xSbx/n-InAs epilayers grown by gas source molecular beam epitaxy;Applied Surface Science;2023-11
2. Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms;Crystals;2023-09-11
3. Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs;Journal of Electronic Materials;1996-05
4. Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaPxAs1-x(x=0, 0.2, 0.4) Substrates;Japanese Journal of Applied Physics;1990-11-20
5. Local Fluctuation of Alloy Composition in InGaAsP/GaAs LPE Layers;Japanese Journal of Applied Physics;1989-08-20
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