Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing-Reference-Cited by-同舟云学术

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Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing

Published:1982-05-20 Issue:Part 2, No. 5 Volume:21 Page:L245-L247
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Itoh Kazuo,Sasaki Yoshisato,Mitsuishi Tomokuni,Miyao Masanobu,Tamura Masao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulsed laser melting of implant amorphized Si1-xGex thin films;Applied Surface Science;2021-10

2. Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl);Materials;2017-06-20

3. Deactivation of metastable single-crystal silicon hyperdoped with sulfur;Journal of Applied Physics;2013-12-28

4. Phase diagram study of the Si–P system in Si-rich region;Journal of Materials Research;2011-06-07

5. Mechanism of de-activation and clustering of B in Si at extremely high concentration;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12

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