Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor-Reference-Cited by-同舟云学术

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Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Published:2012-02-20 Issue:2 Volume:51 Page:02BC04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Low Kain Lu,Zhan Chunlei,Han Genquan,Yang Yue,Goh Kian-Hui,Guo Pengfei,Toh Eng-Huat,Yeo Yee-Chia

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Complementary tunneling transistor for low power application

2. Low-subthreshold-swing tunnel transistors

3. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

4. Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits

5. Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and application of germanium based complementary TFET devices with step tunneling paths;Microelectronics Journal;2024-08

2. Impact of work function variation for enhanced electrostatic control with suppressed ambipolar behavior for dual gate L-TFET;Current Applied Physics;2022-12

3. Assessing the Impact of Drain Underlap Perspective Approach to Investigate DC/RF to Linearity Behavior of L-Shaped TFET;Silicon;2022-04-13

4. Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET;ECS Journal of Solid State Science and Technology;2021-06-01

5. Extended gate with source splitted tunnel field effect transistor for improved device performance;Materials Today: Proceedings;2021

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