Development of the Transparent Conductive Oxide Layer for Nanocrystalline Cubic Silicon Carbide/Silicon Heterojunction Solar Cells with Aluminum Oxide Passivation Layers-Reference-Cited by-同舟云学术

Development of the Transparent Conductive Oxide Layer for Nanocrystalline Cubic Silicon Carbide/Silicon Heterojunction Solar Cells with Aluminum Oxide Passivation Layers

Published:2012-02-20 Issue:2 Volume:51 Page:02BP04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Irikawa Junpei,Miyajima Shinsuke,Watahiki Tatsuro,Konagai Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells

2. High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer

3. Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature

4. High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition

5. Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

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