Enhanced Temperature Characteristics of InGaAs/InAlGaAs Multi-Quantum-Well Lasers on Low-In-Content InGaAs Ternary Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=4/a=041203/pdf
Reference14 articles.
1. Theoretical gain of strained quantum well grown on an InGaAs ternary substrate
2. $\bf In_{0.38}Ga_{0.62}As$/InAlGaAs/InGaP Strained Double Quantum Well Lasers on $\bf In_{0.21}Ga_{0.79}As$ Ternary Substrate
3. Long-wavelength strained quantum-well lasers oscillating up to 210/spl deg/C on InGaAs ternary substrates
4. High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates
5. 1.3 µm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates
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1. 1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement;IEEE Journal of Selected Topics in Quantum Electronics;2015-11
2. Theoretical and Experimental Investigation of the Incident-Power-Dependent Extinction Ratio of an Electroabsorption Modulator Integrated With a Distributed Feedback Laser;IEEE Journal of Quantum Electronics;2011-01
3. Many-body design of highly strained GaInNAs electroabsorption modulators on GaInAs ternary substrates;Journal of Applied Physics;2010-05
4. Polarization properties and instabilities of QD VCSELs;SPIE Proceedings;2010-04-30
5. Successful Application of the 8-band ${\mbi{k}}{\cdot}$${\mbi{p}}$ Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling;IEEE Journal of Quantum Electronics;2009-09
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