Many-body design of highly strained GaInNAs electroabsorption modulators on GaInAs ternary substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3360937
Reference28 articles.
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2. Wide Temperature Range (${-}$25 $^{\circ}$C–100 $^{\circ}$C) Operation of a 10-Gb/s 1.55-$\mu$m Electroabsorption Modulator Integrated DFB Laser for 80-km SMF Transmission
3. 25 Gbit/s 1.3 [micro sign]m InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system
4. Wide Temperature Range Operation of a 1.55-$\mu$m 40-Gb/s Electroabsorption Modulator Integrated DFB Laser for Very Short-Reach Applications
5. Theoretical gain of strained quantum well grown on an InGaAs ternary substrate
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