Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell-Reference-Cited by-同舟云学术

Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell

Published:2011-04-20 Issue:4 Volume:50 Page:04DD04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Muraguchi Masakazu,Sakurai Yoko,Takada Yukihiro,Shigeta Yasuteru,Ikeda Mitsuhisa,Makihara Katsunori,Miyazaki Seiichi,Nomura Shintaro,Shiraishi Kenji,Endoh Tetsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Impact of floating gate dry etching on erase characteristics in NOR flash memory

2. Profiling of Nitride-Trap-Energy Distribution in SONOS Flash Memory by Using a Variable-Amplitude Low-Frequency Charge-Pumping Technique

3. A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method—Part I: Fundamental Theory and Applications to Study of the Trapped Charge Vertical Location and Capture Efficiency of SONOS-Type Devices

4. Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures

5. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

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1. Disturbance characteristics of charge trap flash memory with tunneling field-effect transistor;Japanese Journal of Applied Physics;2014-10-10

2. Time resolved measurements of ultrafast transport pulses using photoconductive switches;AIP Conference Proceedings;2013

3. Carrier Transport Mechanisms of the Programming and Retention Characteristics for TaN–Al$_{2}$O$_{3}$–Si$_{3}$N$_{4}$–SiO$_{2}$–Si Flash Memory Devices;Japanese Journal of Applied Physics;2012-06-20

4. Carrier Transport Mechanisms of the Programming and Retention Characteristics for TaN–Al2O3–Si3N4–SiO2–Si Flash Memory Devices;Japanese Journal of Applied Physics;2012-06-01