Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1951060
Reference15 articles.
1. Design and scaling of a SONOS multidielectric device for nonvolatile memory applications
2. High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology
3. NROM: A novel localized trapping, 2-bit nonvolatile memory cell
4. Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory
5. Silicon-nitride as a tunnel dielectric for improved SONOS-type flash memory
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