Thermal Stability and Oxidation Resistance of W, TiW, W(N) and TiW(N) Thin Films Deposited on Si-Reference-Cited by-同舟云学术

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Thermal Stability and Oxidation Resistance of W, TiW, W(N) and TiW(N) Thin Films Deposited on Si

Published:2000-11-15 Issue:Part 1, No. 11 Volume:39 Page:6413-6421
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang Chich Shang,Wu Tai Bor,Huang Chun Kai,Shih Wong Cheng,Chao Lan Lin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Capturing the Dynamics of Ti Diffusion Across Ti_xW_1−x/Cu Heterostructures using X‐Ray Photoelectron Spectroscopy;Advanced Physics Research;2023-05-25

2. Influence of post-deposition annealing temperature on structural and electrical properties of TiW contact thin films;Journal of the Korean Physical Society;2023-05-22

3. Evaluation of the thermal stability of TiW/Cu heterojunctions using a combined SXPS and HAXPES approach;Journal of Applied Physics;2022-04-28

4. Thermal and oxidation stability of TixW1−x diffusion barriers investigated by soft and hard x-ray photoelectron spectroscopy;Journal of Applied Physics;2021-05-21

5. Ab initio investigation of the atomic volume, thermal expansion, and formation energy of WTi solid solutions;Physical Review Materials;2021-04-01

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