Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System-Reference-Cited by-同舟云学术

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Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System

Published:2000-04-30 Issue:Part 1, No. 4B Volume:39 Page:2448-2451
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Roslund Jöran H.,Saito Ken,Suzuki Kyoichi,Yamaguchi Hiroshi,Hirayama Yoshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of carriers in GaSb∕InAs superlattice grown on conductive GaSb substrate;Applied Physics Letters;2008

2. Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

3. Undoped electron-hole bilayers in a GaAs∕AlGaAs double quantum well;Applied Physics Letters;2007-01-29

4. Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots;Physical Review B;2005-11-08

5. Effects of electron-hole hybridization on cyclotron resonance inInAs∕GaSbheterostructures;Physical Review B;2004-10-11

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