Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice-Reference-Cited by-同舟云学术

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Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice

Published:2008 Issue:3 Volume:26 Page:1081
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chandrasekhar Rao T. V.,Antoszewski J.,Rodriguez J. B.,Plis E.,Krishna S.,Faraone L.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors;Opto-Electronics Review;2024-01-03

2. Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure;Infrared Technology and Applications XLVI;2020-04-23

3. Determination of background doping polarity of unintentionally doped semiconductor layers;Applied Physics Letters;2020-02-18

4. Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications;Infrared Physics & Technology;2019-01

5. Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices;Journal of Applied Physics;2018-06-21

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