Contrast Measurement of Reflection Masks Fabricated from Cr and Ta Absorbers for Extreme Ultraviolet Lithography-Reference-Cited by-同舟云学术

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Contrast Measurement of Reflection Masks Fabricated from Cr and Ta Absorbers for Extreme Ultraviolet Lithography

Published:2000-12-30 Issue:Part 1, No. 12B Volume:39 Page:6815-6818
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Niibe Masahito,Watanabe Takeo,Nii Hajime,Tanaka Takeshi,Kinoshita Hiroo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer etching of Sn by surface modification with H and Cl radicals;Nanotechnology;2022-11-04

2. Mask Materials and Designs for Extreme Ultra Violet Lithography;Electronic Materials Letters;2018-03-21

3. Extreme ultraviolet lithography: A review;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

4. Boundary Structure of Mo/Si Multilayers for Soft X-Ray Mirrors;Japanese Journal of Applied Physics;2002-05-15

5. Performance of Cr mask for extreme-ultraviolet lithography;SPIE Proceedings;2001-09-05

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