Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate-Reference-Cited by-同舟云学术

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Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate

Published:2000-11-15 Issue:Part 1, No. 11 Volume:39 Page:6170-6173
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Min-Ho,Lee Sung-Nam,Park Nae-Man,Park Seong-Ju

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of parameters for generating nitrogen plasma in plasma-assisted MOCVD growth of InGaN thin films;AIP Advances;2019-11-01

2. Nanoporous InGaN prepared by KOH electrochemical etching with different light sources;Microelectronic Engineering;2014-08

3. Nanoporous InGaN of high In composition prepared by KOH electrochemical etching;Materials Science in Semiconductor Processing;2013-12

4. Compositional effect of antimony on structural, optical, and photoluminescence properties of chemically deposited (Cd1−xSbx)S thin films;Superlattices and Microstructures;2013-07

5. Photoluminescent studies of nanocrystalline thin films prepared by chemical bath deposition technique;SPIE Proceedings;2010-03-25

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