Stress Measurements in Silicon Substrates withTiSi2Patterns Using Raman Microprobe-Reference-Cited by-同舟云学术

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Stress Measurements in Silicon Substrates withTiSi2Patterns Using Raman Microprobe

Published:1994-01-15 Issue:Part 1, No.1A Volume:33 Page:171-177
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ito Tadashi,Azuma Hirozumi,Noda Shoji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermoreflectance-based in-depth stress distribution measurement technique for single-crystal silicon structures;Japanese Journal of Applied Physics;2016-05-11

2. Packaging Material Evaluation for 2.5D/3D TSV Application;Transactions of The Japan Institute of Electronics Packaging;2016

3. Micro-Raman spectroscopic analysis of single crystal silicon microstructures for surface stress mapping;Japanese Journal of Applied Physics;2015-09-09

4. Formation of compressively strained SiGe/Si(110) heterostructures and their characterization;Journal of Crystal Growth;2013-01

5. Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy;Advanced Aspects of Spectroscopy;2012-08-29

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