Thermoreflectance-based in-depth stress distribution measurement technique for single-crystal silicon structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=6S1/a=06GP08/pdf
Reference37 articles.
1. Mechanical Properties of Polycrystalline Titanium Nitride Films Measured by XRD Tensile Testing
2. Fatigue characteristics of polycrystalline silicon thin-film membrane and its dependence on humidity
3. Tensile Test on (110) <110> Thin Film Single Crystal Silicon with Different Processing Conditions
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1. Numerical calculation of thermoreflectance coefficient of c-Si for wavelengths of 200–800 nm and temperatures of 300–500 K;Japanese Journal of Applied Physics;2023-11-01
2. Thermal Effusivity Calibration Procedure for Thermal Microscope;Sensors and Materials;2019-03-08
3. Analysis of residual stress around a Berkovich nano-indentation by micro-Raman spectroscopy;AIP Advances;2019-01
4. Phase Distribution of Thermoreflectance Signal Around Local Stress on Silicon Surface;Materia Japan;2018-12-01
5. Fiber-coupled thermal microscope for solid materials based on thermoreflectance method;Japanese Journal of Applied Physics;2018-05-08
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