Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Highly Uniform GaAs/AlAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy

Published:1994-12-30 Issue:Part 1, No. 12B Volume:33 Page:7199-7203
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yi,Nishimoto Yoshinori,Shimomura Satoshi,Gamo Kenji,Murase Kazuo,Sano Naokatsu,Adachi Akira,Kanamoto Kyozo,Isu Toshiro,Fujita Katsuhisa,Watanabe Toshihide,Hiyamizu Satoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ etching and regrowth in III–V molecular beam epitaxy for future nanotechnology;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

2. Epitaxial growth to non-planar substrates by step-flow;Applied Surface Science;1999-11

3. Local probe techniques for luminescence studies of low-dimensional semiconductor structures;Journal of Applied Physics;1998-08-15

4. Fabrication of buried quantum structures using FIB-MBE total vacuum process;Microelectronic Engineering;1997-02

5. InxGa1−xAs/GaAs quantum wire structures grown on GaAs (100) patterned substrates with [001] ridges;Journal of Crystal Growth;1995-05

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