Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=9/a=091002/pdf
Reference10 articles.
1. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells
2. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
3. Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy
4. Carrier relaxation dynamics in an ultrafast all-optical modulator using an intersubband transition
5. Step‐free surface grown on GaAs (111)B substrate by selective area metalorganic vapor phase epitaxy
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