Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO2Gate Dielectrics-Reference-Cited by-同舟云学术

Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO2Gate Dielectrics

Published:2009-06-19 Issue: Volume:2 Page:071402
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Ando Takashi,Shimura Takayoshi,Watanabe Heiji,Hirano Tomoyuki,Yoshida Shinichi,Tai Kaori,Yamaguchi Shinpei,Iwamoto Hayato,Kadomura Shingo,Toyoda Satoshi,Kumigashira Hiroshi,Oshima Masaharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=7/a=071402/pdf

Reference6 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

3. Crystallization in HfO2 gate insulators with in situ annealing studied by valence-band photoemission and x-ray absorption spectroscopy

4. Vacancy and interstitial defects in hafnia

5. Roughness at ZrO2/Si interfaces induced by accelerated oxidation due to the metal oxide overlayer

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