Ionized Impurity Scattering in n-Type Germanium and n-Type Silicon
Author:
Affiliation:
1. Central Research Laboratory, Hitachi, Ltd.
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
https://journals.jps.jp/doi/pdf/10.1143/JPSJ.18.1604
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2. Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys;Applied Physics Letters;2021-12-13
3. Ultralow Resistivity Ge:Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane;ACS Applied Materials & Interfaces;2016-08-29
4. Experimental doping dependence of the lattice parameter inn-type Ge: Identifying the correct theoretical framework by comparison with Si;Physical Review B;2016-01-08
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