Proton Irradiation Damage in GaAs Single Crystals Examined for Solar Cells-Reference-Cited by-同舟云学术

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Proton Irradiation Damage in GaAs Single Crystals Examined for Solar Cells

Published:1983-11-20 Issue:Part 1, No. 11 Volume:22 Page:1727-1733
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamaguchi Masafumi,Yamamoto Akio,Shibukawa Atsushi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Damage Coefficient for Minority-Carrier Diffusion Length of Triple-Cation Perovskite Solar Cells under 1 MeV Electron Irradiation for Space Applications;The Journal of Physical Chemistry C;2021-06-11

2. Numerical Simulation of GaAs Solar Cell Aging Under Electron and Proton Irradiation;IEEE Journal of Photovoltaics;2019-11

3. III–V Laser Power Converters With Vertically Stacked Subcells Demonstrating Superior Radiation Resilience;IEEE Transactions on Nuclear Science;2019-06

4. Study the effects of proton irradiation on GaAs/Ge solar cells;2010 35th IEEE Photovoltaic Specialists Conference;2010-06

5. A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs;Materials Science and Engineering: B;2001-07

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