A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure;AIP Conference Proceedings;2014
2. TRANSPORT AND ELECTRONIC PROPERTIES OF TWO DIMENSIONAL ELECTRON GAS IN DELTA-MIGFET IN GAAS;Progress In Electromagnetics Research;2010
3. Valence band states in Si-based p-type delta-doped field effect transistors;Journal of Physics: Conference Series;2009-05-01
4. k·p calculations of p-type δ-doped quantum wells in Si;Solid-State Electronics;2008-06
5. calculations for double p-type -doped quantum wells in GaAs;Superlattices and Microstructures;2006-08
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