Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers-Reference-Cited by-同舟云学术

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Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers

Published:1983-01-20 Issue:Part 2, No. 1 Volume:22 Page:L16-L18
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsuya Hideki,Kondo Yojiro,Kanamori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of silicon crystals;Handbook of Silicon Based MEMS Materials and Technologies;2020

2. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-;Journal of Crystal Growth;2017-09

3. Enhanced diffusion of boron by oxygen precipitation in heavily boron-doped silicon;Journal of Applied Physics;2017-06-07

4. Properties of Silicon Crystals;Handbook of Silicon Based MEMS Materials and Technologies;2015

5. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon;Journal of Applied Physics;2014-11-21

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