Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms--Reference-Cited by-同舟云学术

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

Published:2017-09 Issue: Volume:474 Page:110-120
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kobayashi K.,Yamaoka S.,Sueoka K.,Vanhellemont J.

Funder

JSPS KAKENHI

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Microdefects and Impurities in Dislocation-Free Silicon Crystals

2. Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

3. K., Nakamura, R., Suewaka, T., Saishoji, J. Tomioka, Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, 2003, p. 161 and references therein.

4. Defect Formation Behaviors in Heavily Doped Czochralski Silicon

5. Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth

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