Structural, Electronic, and Optical Properties of InxGa1-xAs Alloys by Full Potential Linear Augmented Plane Wave Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors withFt≳100 GHz
2. Fe-implanted InGaAs terahertz emitters for 1.56μm wavelength excitation
3. Observation of 1.5 μm quantum confined Stark effect in InGaAs/AlGaAs multiple quantum wells on GaAs substrates
4. Pseudodielectric functions of InGaAs alloy films grown on InP
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2. The structural and optical properties of ternary mixed crystals In Ga1−As with zinc-blende structure by first-principle calculations;Physica B: Condensed Matter;2019-09
3. Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method;The European Physical Journal B;2019-07
4. Photoelectric properties of InxGa1-xAs: A first-principles study;Superlattices and Microstructures;2019-04
5. Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1);Computational Materials Science;2018-10
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