Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method-Reference-Cited by-同舟云学术

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Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method

Published:2008-01-18 Issue:1 Volume:47 Page:87-90
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jeon Hoonha,Verma Ved Prakash,Hwang Sookhyun,Lee Sooyeon,Park Chiyoung,Kim Do-Hyun,Choi Wonbong,Jeon Minhyon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film

2. Thick Film ZnO Resistive Gas Sensors: Analysis of Their Kinetic Behavior

3. ZnO Schottky ultraviolet photodetectors

4. A 5% efficient photoelectrochemical solar cell based on nanostructured ZnO electrodes

5. Low-Temperature Fabrication of Light-Emitting Zinc Oxide Micropatterns Using Self-Assembled Monolayers

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of Ga–Zn–O Ultraviolet Phototransistors Using Radio-Frequency Magnetron Co-Sputtering Method;Nanoscience and Nanotechnology Letters;2018-03-01

2. Reduction of self-heating effect in (Ga)ZnO thin film transistor;Surface Engineering;2017-03-09

3. RF Power Effect on the Properties of Sputtered ZnO Films for Channel Layer Applications in Thin-Film Transistors;Journal of Electronic Materials;2012-03-17

4. Synthesis and characterization of sol–gel derived gallium-doped zinc oxide thin films;Journal of Alloys and Compounds;2012-01

5. Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO2 as gate insulator;Thin Solid Films;2012-01

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