Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers-Reference-Cited by-同舟云学术

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Relative Intensity Noise Characteristics of Long-Wavelength Quantum Dot Vertical-Cavity Surface-Emitting Lasers

Published:2008-08-08 Issue:8 Volume:47 Page:6357-6358
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Peng Peng-Chun,Yeh Chao-En,Kuo Hao-Chung,Xuan Rong,Lin Chun-Ting,Lin Gray,Chi Sien,Chi Jim Y.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts

2. Quantum dots for lasers, amplifiers and computing

3. Single-mode 1.27-/spl mu/m InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers

4. Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

5. Relative intensity noise characteristics of injection-locked semiconductor lasers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wavelength switching based on quantum-dot vertical-cavity surface-emitting laser;Laser Physics;2012-08-01

2. 1550 nm DFB semiconductor lasers with high power and low noise;SPIE Proceedings;2011-02-10

3. Investigations of Surface State and 1/frNoise Characteristics of InGaAs Metal–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2009-07-21

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