Single-mode 1.27-/spl mu/m InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers-Reference-Cited by-同舟云学术

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Single-mode 1.27-/spl mu/m InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers

Published:2005-01 Issue:1 Volume:11 Page:121-126
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Hao-Chung Kuo ,Ya-Hsien Chang ,Yi-An Chang ,Lai F.-I.,Jung-Tang Chu ,Min-Ying ,Shing-Chung Wang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/30365/01395897.pdf?arnumber=1395897

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance;IEEE Journal of Quantum Electronics;2022-04

2. Energy gaps, valence and conduction charge densities and optical properties of GaAs1−xPx;International Journal of Modern Physics B;2018-04-13

3. Single-Mode VCSELs;Springer Series in Optical Sciences;2012-10-16

4. Effect of different P/As ratio on the optical and structural properties of GaAs1−xPx/GaAs;Surface and Interface Analysis;2010-03-29

5. Polarization Characteristics of Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Light Injection;IEEE Photonics Technology Letters;2010-02

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