Performance of Organic Field-Effect Transistor Based on Poly(3-hexylthiophene) as a Semiconductor and Titanium Dioxide Gate Dielectrics by the Solution Process-Reference-Cited by-同舟云学术

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Performance of Organic Field-Effect Transistor Based on Poly(3-hexylthiophene) as a Semiconductor and Titanium Dioxide Gate Dielectrics by the Solution Process

Published:2008-11-14 Issue:11 Volume:47 Page:8279-8283
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ramajothi Jayaraman,Ochiai Shizuyasu,Kojima Kenzo,Mizutani Teruyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Identification of high-dielectric constant compounds from statistical design;npj Computational Materials;2022-07-07

2. High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor;Organic Electronics;2022-02

3. Low power organic field effect transistors with copper phthalocyanine as active layer;Journal of Science: Advanced Materials and Devices;2018-09

4. Zirconium oxide dielectric layer grown by a surface sol–gel method for low-voltage, hysteresis-free, and high-mobility polymer field effect transistors;Organic Electronics;2016-01

5. Low-Voltage Flexible Organic Electronics Based on High-Performance Sol–Gel Titanium Dioxide Dielectric;ACS Applied Materials & Interfaces;2015-04-01

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