Low Voltage Operation of High-κ HfO2/TiO2/Al2O3Single Quantum Well for Nanoscale Flash Memory Device Applications-Reference-Cited by-同舟云学术

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Low Voltage Operation of High-κ HfO2/TiO2/Al2O3Single Quantum Well for Nanoscale Flash Memory Device Applications

Published:2008-03-14 Issue:3 Volume:47 Page:1818-1821
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Maikap Siddheswar,Wang Ting-Yu,Tzeng Pei-Jer,Lee Heng-Yuan,Lin Cha-Hsin,Wang Ching-Chiun,Lee Lurng-Shehng,Yang Jer-Ren,Tsai Ming-Jinn

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference4 articles.

1. Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer

2. Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications

3. Electronic states at the interface of Ti–Si oxide on Si(100)

4. Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)

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1. Investigation of Annealing Temperature and Gamma Irradiation on HfO₂/Dy₂O₃/Al₂O₃/n-Si (100) Memory Capacitor;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

2. Analysis of HfO2 Charge Trapping Layer Characteristics After UV Treatment;ECS Journal of Solid State Science and Technology;2021-04-01

3. Impacts of HfO2/ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors;IEEE Journal of the Electron Devices Society;2019

4. Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications;Nanoscale Research Letters;2017-04-13

5. Charge trap memory based on few-layer black phosphorus;Nanoscale;2016

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