Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire-Reference-Cited by-同舟云学术

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Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire

Published:2006-02-08 Issue:2A Volume:45 Page:646-650
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuroda Noritaka,Kitayama Takuya,Nishi Yohei,Saiki Kazuya,Yokoi Hiroyuki,Watanabe Junji,Cho Meoungwham,Egawa Takashi,Ishikawa Hiroyasu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of GaN epitaxial layers in mid- and far-infrared ranges;ST PETER POLY U J-PH;2024

2. Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate;Applied Sciences;2021-06-29

3. Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers;Materials Chemistry and Physics;2020-09

4. Depth profile characterization technique for electron density in GaN films by infrared reflectance spectroscopy;Japanese Journal of Applied Physics;2016-04-06

5. Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation;Journal of Applied Physics;2016-03-07

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